• DocumentCode
    274543
  • Title

    High reliability InGaAsP/InP buried heterostructure lasers grown entirely by atmospheric MOVPE

  • Author

    Sim, P. ; Skeats, A.P. ; Taylor, M.R. ; Hockly, M. ; Cooper, D.M. ; Nelson, A.W. ; Devlin, W.J. ; Regnault, J.C.

  • Author_Institution
    British Telecom Res. Labs., Ipswich, UK
  • fYear
    1988
  • fDate
    11-15 Sep 1988
  • Firstpage
    396
  • Abstract
    Results are presented which show for the first time the achievement of predicted median lifetimes of 3×105 hours at 80°C, and 107 hours at 25°C by buried heterostructure (BH) lasers grown entirely by atmospheric MOVPE
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; life testing; reliability; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 107 hr; 25 degC; 3*105 hr; 80 degC; III-V semiconductor; InGaAsP-InP; atmospheric MOVPE; high reliability BH lasers; median lifetimes;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    93604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=274543