Title :
High reliability InGaAsP/InP buried heterostructure lasers grown entirely by atmospheric MOVPE
Author :
Sim, P. ; Skeats, A.P. ; Taylor, M.R. ; Hockly, M. ; Cooper, D.M. ; Nelson, A.W. ; Devlin, W.J. ; Regnault, J.C.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
Abstract :
Results are presented which show for the first time the achievement of predicted median lifetimes of 3×105 hours at 80°C, and 107 hours at 25°C by buried heterostructure (BH) lasers grown entirely by atmospheric MOVPE
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; life testing; reliability; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 107 hr; 25 degC; 3*105 hr; 80 degC; III-V semiconductor; InGaAsP-InP; atmospheric MOVPE; high reliability BH lasers; median lifetimes;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
