DocumentCode
2745438
Title
A High-performance Ultra-thin Quarter-Micron CMOS/SIMOX Technology
Author
Ohno, T. ; Kado, Y. ; Harada, M. ; Tsuchiya, T.
Author_Institution
NTT LSI Laboratories
fYear
1993
fDate
17-19 May 1993
Firstpage
25
Lastpage
26
Abstract
We desc r ibe a high-performance 0.25-/spl mu/m-gate CMOS/SIMON technology, and high-speed CMOS circuit operation at a low power supply voltage of 1-2 V. Fully-depleted N/sup +/ poly-Si gate nMOSFETs and P/sup +/ poly-St gate pKOSFETs with 7-nm-thick gate oxide were fabricat- ed using planarized sub-quarter-micron Isolation and a two-level metallization technique. The propagation delay time of a CMOS ring oscillator is 30 ps/stage at the supply voltage of 2 V and 45 ps/stage at 1 V.
Keywords
CMOS integrated circuits; CMOS technology; Fabrication; Implants; Ion implantation; Logic gates; MOS devices;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location
Kyoto, Japan
Type
conf
DOI
10.1109/VLSIT.1993.760227
Filename
760227
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