DocumentCode
274544
Title
An InP/InGaAs/InP monolithic PIN-FET receiver prepared by MOMBE
Author
Uehara, S. ; Ikeda, M. ; Kawaguchi, Yuki ; Akahori, Y. ; Hata, S.
Author_Institution
NTT Opto-electron. Labs., Atsugi, Japan
fYear
1988
fDate
11-15 Sep 1988
Firstpage
400
Abstract
An InP/InGaAs/InP monolithic PIN-FET receiver with a 400-MHz bandwidth and an 8-dB gain has been fabricated. The MOMBE crystal growth together with the Be ion implantation provides a promising OEIC fabrication technique
Keywords
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical communication equipment; photodiodes; receivers; semiconductor growth; 400 MHz; 8 dB; Be ion implantation; InGaAs:Be; InP-InGaAs-InP; InP/InGaAs/InP monolithic PIN-FET receiver; MOMBE; OEIC fabrication technique; optoelectronic integrated circuits; photodiode;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93605
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