Author :
Shahidi, G.G. ; Blair, C. ; Beyer, K. ; Bucelot, T. ; Buti, T. ; Chang, P.N. ; Chu, S. ; Coane, P. ; Comfort, J. ; Davari, B. ; Dennard, R. ; Furkay, S. ; Hovel, H. ; Johnson, J. ; Klaus, D. ; Kiewtniack, K. ; Logan, R. ; Lii, T. ; McFarland, P.A. ; Mazze
Abstract :
An advanced 0.1 /spl mu/m CMOS technology on SOI is presented. In order to minimize short channel effects, relatively thick non- delpleted (0.1 /spl mu/m) SOI film, highly non-uniforin channel doping and source-drain extension-HALO were used. Excellent short channel effects (SCE) down to channel lengths below 0.1 /spl mu/m were obtained. Very high speeds were obtained: Unloaded delay was 20 psec, and fully loaded NAND (FI=FO=3, CL-0.3 pF) delay was 130 psec at supply of 1.8 V.
