DocumentCode
274548
Title
High-coupled power 1.3 μm edge-emitting LED with a rear window and an integrated absorber
Author
Gen-ei, K. ; Tanioka, A. ; Suhara, H. ; Chinen, K.
Author_Institution
Electron Device Eng. Lab., Toshiba Corp., Kawasaki, Japan
fYear
1988
fDate
11-15 Sep 1988
Firstpage
416
Abstract
An InGaAsP edge-emitting LED with a rear window and an integrated absorber is developed. Over 220μW of coupled power is achieved, for the first time, without the use of antireflection front facet coating. Even at low ambient temperature of -40°C the stimulated emission is well suppressed
Keywords
III-V semiconductors; antireflection coatings; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; -40 degC; 1.3 micron; 220 muW; InGaAsP; antireflection front facet coating; edge-emitting LED; integrated absorber; rear window; semiconductors; stimulated emission;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93609
Link To Document