Title :
High speed GaInAs photoconductive-like detectors for long wavelength optical communication
Author :
Morita, Tetsuo ; Murata, Michio ; Koike, Ken-Ichi ; Ono, Kimizo
Author_Institution :
Optoelectron. Technol. Res. Corp., Yokohama, Japan
Abstract :
A very high speed GaInAs photoconductive-like detector has been fabricated by organometallic vapor phase epitaxy. The drift of carriers in this device can be explained by hybrid mode combining photoconductive and pin photodiode mode. The rise and fall time less than 90psec has been achieved with electrode spacing 14μm, and the dark current is approximately 300nA at 1V bias
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; photoconducting devices; photodetectors; vapour phase epitaxial growth; 1.0 V; 14 micron; 300 nA; 90 ps; GaInAs; III-V semiconductors; carrier drift; dark current; electrode spacing; long wavelength optical communication; organometallic vapor phase epitaxy; photoconductive-like detectors; pin photodiode;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
