DocumentCode :
2745518
Title :
High detectivity MWIR Type-II superlattice grown on a GaAs substrate
Author :
Hobbs, M.J. ; Das, S.D. ; Tan, C.H. ; David, J.P.R. ; Krishna, S. ; Rodriguez, J.B. ; Plis, E.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear :
2011
fDate :
9-13 Oct. 2011
Firstpage :
31
Lastpage :
32
Abstract :
Specific detectivity values of 1.0×1011, 2.8×109 and 5.8×108cmHz1/2/W were measured at 77, 200 and 290K, respectively, on a MWIR Type-II InAs/GaSb Superlattice photodiode grown on a GaAs substrate.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared detectors; photodiodes; semiconductor superlattices; InAs-GaSb-GaAs; high detectivity MWIR; superlattice photodiode; temperature 200 K; temperature 290 K; temperature 77 K; type-II superlattice; Dark current; Detectors; Gallium arsenide; Photodiodes; Substrates; Superlattices; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
Type :
conf
DOI :
10.1109/PHO.2011.6110410
Filename :
6110410
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2745518
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