• DocumentCode
    2745535
  • Title

    Polarization selective interband transitions in type-II InAs/GaSb superlattices

  • Author

    Gautam, Nutan ; Barve, Ajit V. ; Myers, Stephen ; Klein, Brianna ; Plis, Elena ; Naydenkov, Mikhail ; Kutty, Maya N. ; Schuler-Sandy, Ted ; Krishna, S.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    33
  • Lastpage
    34
  • Abstract
    Polarization dependent photocurrent has been measured and analyzed in type-II InAs/GaSb strained layer superlattices (SLS). Theoretical studies have also been carried out to understand the origin of polarization selective transitions in SLS system.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; photoemission; semiconductor epitaxial layers; semiconductor superlattices; InAs-GaSb; polarization dependent photocurrent; polarization selective interband transitions; type-II strained layer superlattices; Detectors; Molecular beam epitaxial growth; Photoconductivity; Physics; Semiconductor device measurement; Superlattices; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110411
  • Filename
    6110411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2745535