Title :
Quantum efficiency modeling of PIN photodiodes with InGaAs/GaAsSb quantum wells absorption region
Author :
Chen, Baile ; Sun, Wenlu ; Campbell, Joe C. ; Holmes, A.L., Jr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
A thermionic emission model is used to simulate the quantum efficiency (QE) of InGaAs/GaAsSb type-II quantum wells PIN photodiodes. The effects of layer thicknesses, number of periods, and front- or back-illumination on QE are presented.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-i-n photodiodes; semiconductor device models; semiconductor quantum wells; thermionic emission; InGaAs-GaAsSb; PIN photodiodes; quantum efficiency modeling; quantum wells absorption region; thermionic emission model; Absorption; Indium gallium arsenide; Lighting; Mathematical model; PIN photodiodes; Quantum computing; Thermionic emission; GaAsSb; InGaAs; Quantum Efficiency; Thermionic Emission; Type-II Multiple Quantum Wells;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110412
