Title :
Ultrathin Silicon Nitride Capacitors Fabricated By In Situ Rapid Thermal Multi-processing For 256 Mb DRAM Cells
Author :
Yokozawa ; Ishitani, A.
Author_Institution :
NEC Corporation
Abstract :
In situ rapid thermal multi-processing (RTMP) technology is developed for Si3N4 capacitor film formation. Ultrathin Si3N4 films (36/spl Aring/) exhibit a low leakage current density (10nA/cm/sup 2/ at 1V) and markedly improved dielectric breakdown characteristics. The time to 50 % cumulative faidures for in situ RTMP capacitors is almost 10/sup 4/ times longer than that for conventional capacitors.
Keywords :
Capacitors; Films; Leakage currents; Random access memory; Silicon; Surface cleaning;
Conference_Titel :
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location :
Kyoto, Japan
DOI :
10.1109/VLSIT.1993.760238
