Title :
Heterojunction bipolar transistor pre-amplifier IC for ultra fast lightwave transmission
Author :
Ibe, Hiroyuki ; Yamakawa, Hideaki ; Atsumi, Takehiko ; Nakamura, Masaru ; Akagi, Junko ; Asaka, Masayuki ; Obara, Masao
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
An ultra wideband (4.4 GHz) and low noise (9 pA/√Hz) pre-amplifier for an optical receiver has been monolithically integrated using the GaAlAs/GaAs heterojunction bipolar transistor (HBT) process for the first time
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; optical communication equipment; preamplifiers; receivers; 4.4 GHz; GaAlAs-GaAs; III-V semiconductors; heterojunction bipolar transistor preamplifier; monolithic integration; optical receiver; ultra fast lightwave transmission;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
