• DocumentCode
    2745872
  • Title

    A High-Speed Low Process Complexity Quarter-Micron BiCMOS Technology

  • Author

    Fukami, A. ; Onose, Y. ; Minami, M. ; Matsuzaki, N. ; Shoji, K. ; Watanabe, A. ; Nagano, T. ; Nishida, T. ; Tachibana, S.

  • Author_Institution
    Hitachi, Ltd.
  • fYear
    1993
  • fDate
    17-19 May 1993
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    A high-performance and producible quarter-micron BiCMOS technology is presented. The same p-type W- polycide is utilized for a CMOS gate and for a self- aligned bipolar base as well to minimize process complexity. For 2.5-V operation, base pre-charge BiNMOS gate circuit verifies the highest speed at any load condition.
  • Keywords
    BiCMOS integrated circuits; Bipolar transistors; CMOS integrated circuits; CMOS technology; Delays; Logic gates; MOS devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1993.760253
  • Filename
    760253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2745872