Title :
Monolithic InP-based optical receiver front-end
Author :
Dawe, P.J.G. ; Spear, D.A.H. ; Lee, W.S. ; Antell, G.R. ; Bland, S.W.
Author_Institution :
STC Technol. Ltd., Harlow, UK
Abstract :
Integrated receiver front-ends comprising photodiode, bias resistor, JFET and active load have been fabricated using an all MOVPE quasi-planar embedded process. Primary on-wafer measurements show a sensitivity of -29 dBm at 400 Mbit/s and 1.3 μm wavelength
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; junction gate field effect transistors; optical communication equipment; photodiodes; receivers; 1.3 micron; 400 Mbit/s; InP; MOVPE quasi-planar embedded process; active load; bias resistor; integrated receiver front-end; junction field effect transistor; monolithic integration; on-wafer measurements; photodiode; sensitivity;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
