DocumentCode
2746059
Title
Sub-1/4 /spl mu/m Dual Gate CMOS Technology using In Situ Doped Polysilicons for N and PMPS Gates
Author
Okazaki, Y. ; Inokawa, H. ; Kobayashi, T. ; Miyake, M. ; Morimoto, T. ; Matsuda, T.
Author_Institution
NTT LSI Laboratories
fYear
1993
fDate
17-19 May 1993
Firstpage
95
Lastpage
96
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location
Kyoto, Japan
Type
conf
DOI
10.1109/VLSIT.1993.760262
Filename
760262
Link To Document