Title :
Sub-Quarter-Micron PMOSFETs With Shallow Source And Drain Formed By Rapid Vapor-phase Doping (RVD)
Author :
Kiyota, Y. ; Nakamura, T. ; Inada, T.
Author_Institution :
Hitachi Ltd.
Conference_Titel :
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location :
Kyoto, Japan
DOI :
10.1109/VLSIT.1993.760263
