Title :
Monolithically integrated InAlAs/InGaAs/InP:Fe photodiode junction field-effect transistor structure grown by MOVPE
Author :
Albrecht, H. ; Lauterbach, Ch ; Gessner, R. ; Hoffmann, L.
Author_Institution :
Siemens Res. Labs., Munchen, West Germany
Abstract :
The chip technology and the performance of a monolithically integrated planar heterostructure-photodiode heterojunction field-effect transistor combination (HPD-HJFET) in InAlAs/InGaAs material grown lattice matched on a semiinsulating InP:Fe substrate by MOVPE are presented. The HJFET with 1.6 μm gate length and 180 μm gate width showed a transconductance of 160 mS/mm and a unit-current-gain cut-off frequency of 10 GHz. For the HPD a quantum efficiency of 56% at 1.3 μm wavelength without antireflection coating was achieved and a photocurrent half-width value of 80 ps was measured
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; iron; junction gate field effect transistors; photodiodes; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1.3 micron; 1.6 micron; 10 GHz; 180 micron; 56 percent; 80 ps; III-V semiconductors; InAlAs-InGaAs-InP:Fe; MOVPE; chip technology; heterojunction field-effect transistor; monolithically integrated structure; photocurrent half-width; photodiode junction field-effect transistor structure; planar heterostructure photodiode; quantum efficiency; transconductance; unit-current-gain cut-off frequency;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
