Title :
A Novel TiSi/sub 2/TiN Clad Local Interconnect Technology
Author :
Shin-Puu Jeng ; West, J.A. ; Wyke, D.
Author_Institution :
Texas Instruments, Inc.
Abstract :
A local interconnect (LI) technology utilizing a novel clad TiSi/sub 2/TiN structure has been developed for use in submicron VLSI devices. TiSi/sub 2/ interconnect straps are formed by reaction of a silicon-on-titanium bilayer. A thin TiN layer between the silicide strap and previously salicided regions provides an effective diffusion barrier against counterdoping and substrate silicon outdiffusion. The excellent dry etch selectivity between Si and Ti simplifies the LI patterning process. The new LI structure also offers improved electrical performance over the standard TiN LI because of its lower electrical resistance.
Keywords :
Annealing; Fabrication; Integrated circuit interconnections; Silicon; Standards; Substrates; Tin;
Conference_Titel :
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location :
Kyoto, Japan
DOI :
10.1109/VLSIT.1993.760267
