DocumentCode
2746142
Title
A Novel TiSi/sub 2/TiN Clad Local Interconnect Technology
Author
Shin-Puu Jeng ; West, J.A. ; Wyke, D.
Author_Institution
Texas Instruments, Inc.
fYear
1993
fDate
17-19 May 1993
Firstpage
105
Lastpage
106
Abstract
A local interconnect (LI) technology utilizing a novel clad TiSi/sub 2/TiN structure has been developed for use in submicron VLSI devices. TiSi/sub 2/ interconnect straps are formed by reaction of a silicon-on-titanium bilayer. A thin TiN layer between the silicide strap and previously salicided regions provides an effective diffusion barrier against counterdoping and substrate silicon outdiffusion. The excellent dry etch selectivity between Si and Ti simplifies the LI patterning process. The new LI structure also offers improved electrical performance over the standard TiN LI because of its lower electrical resistance.
Keywords
Annealing; Fabrication; Integrated circuit interconnections; Silicon; Standards; Substrates; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location
Kyoto, Japan
Type
conf
DOI
10.1109/VLSIT.1993.760267
Filename
760267
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