Title :
Recent progress in copper-based wafer bonding for 3-D ICs application
Author_Institution :
Nanyang Technol. Univ., Singapore
Abstract :
This article discusses thermo-compression bonding (also known as diffusion bonding) of metallic copper and its application in 3-D stacking of ICs. Bonding process is described and characterization results are presented. A survey on recent progress of copper-based wafer bonding, particularly low temperature process, and its application for on wafer 3-D ICs are presented.
Keywords :
diffusion bonding; tape automated bonding; wafer bonding; 3-D stacking; copper-based wafer bonding; diffusion bonding; thermo-compression bonding; wafer 3-D IC; Wafer bonding;
Conference_Titel :
Electronic Materials and Packaging, 2008. EMAP 2008. International Conference on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3620-0
Electronic_ISBN :
978-1-4244-3621-7
DOI :
10.1109/EMAP.2008.4784225
