DocumentCode :
2746185
Title :
Quantum dots-in-a-well (DWELL) infrared photodetectors with confinement enhancing barriers
Author :
Barve, A.V. ; Jun Oh Kim ; Sengupta, Sabyasachi ; Sharma, Yagya D. ; Jiayi Shao ; Adhikary, S. ; Rottera, Thomas ; Krishna, Sanjay
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
fYear :
2011
fDate :
9-13 Oct. 2011
Firstpage :
95
Lastpage :
96
Abstract :
Improvement in the performance of quantum dots-in-a-well (DWELL) detectors with confinement enhancing (CE) barriers is presented. Higher responsivity and lower noise, with detectivity of 6.5×1010 cm.Hz1/2W-1 (77K, 0.6V, 7.5μm, f/2) have been obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; quantum well devices; semiconductor device noise; semiconductor quantum dots; semiconductor quantum wells; AlGaAs; InGaAs; confinement enhancing barriers; detectivity; noise; quantum dots-in-a-well detector performance; quantum dots-in-a-well infrared photodetectors; responsivity; Dark current; Detectors; Energy states; Gallium arsenide; Noise; Quantum dots; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
Type :
conf
DOI :
10.1109/PHO.2011.6110442
Filename :
6110442
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2746185
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