DocumentCode :
2746303
Title :
Future Technology Driver: DRAM or High Speed Logic?
Author :
Hwang, C.G. ; Abernathey
Author_Institution :
Samsung Electronics
fYear :
1993
fDate :
17-19 May 1993
Firstpage :
120
Lastpage :
120
Abstract :
Summary form only given. Scaling MOS devices has provided high performance,high density CMOS LSIs, such as memories and microprocessors, and scaling remains the key to obtaining better performance in the future. For over half a decade, researchers have been reporting results for MOSFETs with channel lengths down to 0.1 pm .
Keywords :
MOS devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location :
Kyoto, Japan
Type :
conf
DOI :
10.1109/VLSIT.1993.760277
Filename :
760277
Link To Document :
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