Title :
High power semiconductor devices
Author :
Gentry, F. ; York, R.
Author_Institution :
General Electric Company, Auburn, NY, USA
Abstract :
A brief historical account of the development of high-power semiconductor devices is followed by a description of the existing state of the art. We present a discussion of the interplay between the needs of the circuit engineer and the problems which beset the device designer in meeting these needs, and conclude with a brief look at some of the newer developments in the power semiconductor device field.
Keywords :
Circuits; Costs; Phase control; Power semiconductor devices; Power semiconductor switches; Power transistors; Rectifiers; Silicon; Thyristors; Voltage;
Conference_Titel :
1958 IRE International Convention Record
Conference_Location :
New York, NY, USA
DOI :
10.1109/IRECON.1965.1147502
