Title :
Room temperature polariton lasing from a single GaN nanowire microcavity
Author :
Das, A. ; Heo, J. ; Jankowski, M. ; Guo, W. ; Zhang, L. ; Deng, H. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
The paper demonstrates an ultra-low threshold polariton laser by using a single GaN nanowire as the active medium embedded in a dielectric microcavity. We have also studied the effect of detuning on the lasing characteristics.
Keywords :
gallium compounds; laser tuning; microcavity lasers; nanowires; polaritons; semiconductor lasers; semiconductor quantum wires; GaN; active medium; detuning; dielectric microcavity; nanowire microcavity; room temperature polariton lasing; temperature 293 K to 298 K; Coherence; Excitons; Gallium nitride; Microcavities; Photonics; Plasma temperature; Temperature;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110454
