Title :
Damageless H/sub 2/)/SiH/sub 4/ Plasma-CVD for gate SiO/sub 2/
Author :
Kato, T. ; Furumura, Y. ; Tsuchikawa, H.
Author_Institution :
Fujitsu Limited
Abstract :
We have deposited high-quality SiO/sub 2/ films by damageless plasma-enhanced chemical vapor deposition (CVD) using H/sub 2/0 and SiH/sub 4/ at 310/spl deg/C. The films had lower moisture content and smaller leakage current than conventional plasma CVD films. The interface state and flat-band voltage shif ft induced by plasma irradiation damage were as low as those in thermal gate oxides, apparently due to processing in water vapor. Enhancement of surface migration by adding PH3 to this system improved the step coverage of PSG (P=7wt%).
Keywords :
Abstracts; Films; Interface states; Leakage currents; Logic gates; Plasmas; Temperature measurement;
Conference_Titel :
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location :
Kyoto, Japan
DOI :
10.1109/VLSIT.1993.760294
