DocumentCode
2746606
Title
Damageless H/sub 2/)/SiH/sub 4/ Plasma-CVD for gate SiO/sub 2/
Author
Kato, T. ; Furumura, Y. ; Tsuchikawa, H.
Author_Institution
Fujitsu Limited
fYear
1993
fDate
17-19 May 1993
Firstpage
153
Lastpage
154
Abstract
We have deposited high-quality SiO/sub 2/ films by damageless plasma-enhanced chemical vapor deposition (CVD) using H/sub 2/0 and SiH/sub 4/ at 310/spl deg/C. The films had lower moisture content and smaller leakage current than conventional plasma CVD films. The interface state and flat-band voltage shif ft induced by plasma irradiation damage were as low as those in thermal gate oxides, apparently due to processing in water vapor. Enhancement of surface migration by adding PH3 to this system improved the step coverage of PSG (P=7wt%).
Keywords
Abstracts; Films; Interface states; Leakage currents; Logic gates; Plasmas; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location
Kyoto, Japan
Type
conf
DOI
10.1109/VLSIT.1993.760294
Filename
760294
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