DocumentCode
2746877
Title
Highly stacked quantum dot lasers fabricated by a strain-compensation technique
Author
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawan, Tetsuya
Author_Institution
Nat. Inst. of Inf. & Commun. Technol. (NICT), Tokyo, Japan
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
163
Lastpage
164
Abstract
We fabricated laser diodes containing highly stacked InAs quantum dots using a strain-compensation technique. The quantum dots exhibited laser emissions from 1.47 to 1.7 μm and a high characteristic temperature of 113 K.
Keywords
III-V semiconductors; indium compounds; laser transitions; optical fabrication; quantum dot lasers; InAs; characteristic temperature; laser diodes; stacked quantum dot lasers; strain compensation; temperature 113 K; wavelength 1.47 mum to 1.7 mum; Current measurement; Laser modes; Measurement by laser beam; Quantum dot lasers; Temperature; Threshold current; molecular beam epitaxy; quantum dot; semiconductor laser; strain compensation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110476
Filename
6110476
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