DocumentCode
2746957
Title
Carrier distribution in InP/AlGaInP quantum dot laser diodes
Author
Al-Ghamdi, M.S. ; Smowton, P.M. ; Blood, P. ; Krysa, A.B.
Author_Institution
Phys. Dept., King Abdualziz Univ., Jeddah, Saudi Arabia
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
169
Lastpage
170
Abstract
The threshold current density of InP quantum dot lasers exhibits distinctive behaviour for structures grown at 750°C and becomes less pronounced as the growth temperature is decreased due to decreasing inhomogeneous broadening. This is explained in terms of carrier distribution in the quantum dot states.
Keywords
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; quantum dot lasers; InP-AlGaInP; carrier distribution; inhomogeneous broadening; quantum dot laser diodes; temperature 750 degC; threshold current density; Indium phosphide; Quantum dot lasers; Spontaneous emission; Temperature dependence; Temperature distribution; Temperature measurement; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110479
Filename
6110479
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