Title :
Carrier distribution in InP/AlGaInP quantum dot laser diodes
Author :
Al-Ghamdi, M.S. ; Smowton, P.M. ; Blood, P. ; Krysa, A.B.
Author_Institution :
Phys. Dept., King Abdualziz Univ., Jeddah, Saudi Arabia
Abstract :
The threshold current density of InP quantum dot lasers exhibits distinctive behaviour for structures grown at 750°C and becomes less pronounced as the growth temperature is decreased due to decreasing inhomogeneous broadening. This is explained in terms of carrier distribution in the quantum dot states.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; quantum dot lasers; InP-AlGaInP; carrier distribution; inhomogeneous broadening; quantum dot laser diodes; temperature 750 degC; threshold current density; Indium phosphide; Quantum dot lasers; Spontaneous emission; Temperature dependence; Temperature distribution; Temperature measurement; Threshold current;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110479
