DocumentCode
2747173
Title
Kinetic study of eutectic Sn-3.5Ag and Electroplated Ni metallization in flip-chip solder joints
Author
Chen, Hsiao-Yun ; Chen, Chih
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsin-chu
fYear
2008
fDate
22-24 Oct. 2008
Firstpage
262
Lastpage
267
Abstract
It is well known that Ni and its alloys possess a lower reaction rate with Sn than Cu and Cu alloys. Therefore Ni-based under bump metallization have attracted attention in recent years. In this study, the diffusion-controlled reaction between eutectic Sn-3.5Ag flip chip solder joints between electroplated-Ni (EP-Ni) and electroless-Ni (EL-Ni) has been investigated. Morphology and growth kinetics of the formed Ni3Sn4 are study under different reflow temperatures, durations and times. The growth rates and the formation activation energy of Ni3Sn4 IMC were estimated with EP-Ni and EL-Ni, respectively. The obtained data showed that the Ni3Sn4 in the Sn-3.5Ag filp chip solder grow much faster with EP-Ni than EL-Ni UBM under the same condition. In summary, we can conclude that the slow reaction rate of EP-Ni provided a well-attached contact at the interface after 20 minutes reflow process and is better compare with EL-Ni UBM at the substrate.
Keywords
chemical interdiffusion; eutectic alloys; eutectic structure; flip-chip devices; integrated circuit metallisation; integrated circuit packaging; nickel; reaction rate constants; reflow soldering; silver alloys; solders; tin alloys; SnAg-Ni; UBM; diffusion-controlled reaction; electroless nickel; electroplated nickel metallization; eutectic Sn-3.5Ag alloy; flip-chip solder joint; formation activation energy; growth kinetics; intermetallic compound morphology; reaction rate; reflow temperature; under bump metallization; Copper alloys; Flip chip solder joints; Kinetic theory; Materials science and technology; Metallization; Morphology; Nickel alloys; Packaging; Soldering; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Materials and Packaging, 2008. EMAP 2008. International Conference on
Conference_Location
Taipei
Print_ISBN
978-1-4244-3620-0
Electronic_ISBN
978-1-4244-3621-7
Type
conf
DOI
10.1109/EMAP.2008.4784279
Filename
4784279
Link To Document