Title :
Real space transfer noise of GaAs p-HEMTs
Author :
Feng, M. ; Caruth, D. ; Hsia, S.K. ; Fendrich, J.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
From the measured noise data in a GaAs p-HEMT over a 2-18 GHz frequency range, we have identified the magnitudes of the gate and drain noise sources in the 2-DEG saturation velocity region of undoped InGaAs channel. Additional gate and drain noise sources in the parallel doped AlGaAs channel contribute to the overall noise in p-HEMT. We call this additional noise the real space transfer noise
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; 2 to 18 GHz; 2DEG saturation velocity; GaAs; GaAs p-HEMT; real space transfer noise; Gallium arsenide; HEMTs; Indium gallium arsenide; Intrusion detection; MESFETs; Noise figure; Noise measurement; Semiconductor device noise; Temperature; Velocity measurement;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711707
