• DocumentCode
    2747361
  • Title

    A Highly accurate method to calculate capacitance of MEMS sensors with circular membranes

  • Author

    Rahman, Mosaddequr ; Chowdhury, Sazzadur

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
  • fYear
    2009
  • fDate
    7-9 June 2009
  • Firstpage
    178
  • Lastpage
    181
  • Abstract
    A highly accurate analytical method to calculate capacitance of MEMS capacitive type sensors with circular membranes has been presented. The method determines the center deflection of the membrane by taking account of the electrostatic pressure due to the bias voltage, external pressure, residual stress, and nonlinear spring hardening effect during large deflection. A new deflection shape function uses this center deflection to calculate a highly accurate deflection profile of the membrane which is then used to calculate the capacitance between the deformed membrane and the fixed backplate for any deformed profile of the membrane. The model has been verified by comparing the results with experimental and 3-D electromechanical finite element analysis (FEA) results with excellent agreement. The model predicted values deviate by a maximum of 2.2% for the membrane center deflection and 3.4% for capacitance values for different external pressure loading and electrostatic bias voltage.
  • Keywords
    capacitive sensors; finite element analysis; internal stresses; membranes; micromechanical devices; 3D electromechanical finite element analysis; MEMS sensors; capacitance calculation; capacitive type sensors; circular membranes; deformed membrane; electrostatic bias voltage; electrostatic pressure; external pressure loading; nonlinear spring hardening; residual stress; Biomembranes; Capacitance; Capacitive sensors; Electrostatics; Finite element methods; Micromechanical devices; Residual stresses; Shape; Springs; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electro/Information Technology, 2009. eit '09. IEEE International Conference on
  • Conference_Location
    Windsor, ON
  • Print_ISBN
    978-1-4244-3354-4
  • Electronic_ISBN
    978-1-4244-3355-1
  • Type

    conf

  • DOI
    10.1109/EIT.2009.5189606
  • Filename
    5189606