Employing work function enginnering and asymmetric gate oxide in nano-scale source-heterojunction-MOS-transistor

Author

Tahermaram, Mahsa ; Vadizadeh, Mahdi ; Eslamzadeh, Ali ; Fathipour, Morteza

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran

fYear

2009

fDate

7-9 June 2009

Firstpage

196

Lastpage

201

Abstract

The source-heterojunction-MOS-transistor provides high drain current. This is originated from the high velocity electron injection at the source edge due to band offset energy. However, these devices suffer from large off-state current. In this paper, we have analyzed the off-state current in this device and have proposed use of work function engineering as well as asymmetric gate oxide to minimize the magnitude of this off-state current. The analysis of the off-state current characteristics shows that provided 93% reduction in off-state current.

Keywords

MOSFET; high electron mobility transistors; nanoelectronics; semiconductor heterojunctions; work function; asymmetric gate oxide; high-velocity electron injection; nanoscale source-heterojunction MOS transistor; off-state current; work function engineering; Capacitive sensors; Electrons; Germanium silicon alloys; Kinetic energy; Leakage current; MOSFET circuits; Power engineering and energy; Power generation; Random access memory; Silicon germanium; GIDL; band to band generationt; heterojunction; off-state current; strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electro/Information Technology, 2009. eit '09. IEEE International Conference on

Conference_Location

Windsor, ON

Print_ISBN

978-1-4244-3354-4

Electronic_ISBN

978-1-4244-3355-1

Type

conf

DOI

10.1109/EIT.2009.5189610

Filename

5189610