Title :
Employing work function enginnering and asymmetric gate oxide in nano-scale source-heterojunction-MOS-transistor
Author :
Tahermaram, Mahsa ; Vadizadeh, Mahdi ; Eslamzadeh, Ali ; Fathipour, Morteza
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran
Abstract :
The source-heterojunction-MOS-transistor provides high drain current. This is originated from the high velocity electron injection at the source edge due to band offset energy. However, these devices suffer from large off-state current. In this paper, we have analyzed the off-state current in this device and have proposed use of work function engineering as well as asymmetric gate oxide to minimize the magnitude of this off-state current. The analysis of the off-state current characteristics shows that provided 93% reduction in off-state current.
Keywords :
MOSFET; high electron mobility transistors; nanoelectronics; semiconductor heterojunctions; work function; asymmetric gate oxide; high-velocity electron injection; nanoscale source-heterojunction MOS transistor; off-state current; work function engineering; Capacitive sensors; Electrons; Germanium silicon alloys; Kinetic energy; Leakage current; MOSFET circuits; Power engineering and energy; Power generation; Random access memory; Silicon germanium; GIDL; band to band generationt; heterojunction; off-state current; strain;
Conference_Titel :
Electro/Information Technology, 2009. eit '09. IEEE International Conference on
Conference_Location :
Windsor, ON
Print_ISBN :
978-1-4244-3354-4
Electronic_ISBN :
978-1-4244-3355-1
DOI :
10.1109/EIT.2009.5189610
