Thermal characterization of the VBIC dielectrically isolated device

Author

Hossain, Md M. ; Davis, W. Alan ; Russell, Howard T., Jr. ; Carter, Ronald L.

Author_Institution

Dept. of Electr. & Comput. Eng., St. Cloud State Univ., St. Cloud, MN, USA

fYear

2009

fDate

7-9 June 2009

Firstpage

222

Lastpage

225

Abstract

This paper presents thermal characterization of the dielectrically isolated bipolar junction transistor (DIBJT) with the vertical bipolar inter-company (VBIC) model. The VBIC model incorporates the thermal nodes of a transistor. Semiconductor devices are strongly influenced by the thermal effects. When the device is heated, it raises its local temperature which changes the device´s intrinsic parameters. This paper shows the behavior of collector current, base current, thermal transconductances, and junction temperature versus temperature. It also shows several other temperature characteristics of a VBIC DIBJT device.

Keywords

bipolar transistors; semiconductor junctions; thermal analysis; DIBJT device intrinsic parameter; VBIC DIBJT device temperature characteristics; VBIC dielectrically isolated device; base current parameter; collector current parameter; dielectrically isolated bipolar junction transistor; thermal transconductance; vertical bipolar inter-company model; Analog integrated circuits; Current measurement; Dielectric devices; Heating; Semiconductor devices; Substrates; Temperature; Thermal conductivity; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electro/Information Technology, 2009. eit '09. IEEE International Conference on

Conference_Location

Windsor, ON

Print_ISBN

978-1-4244-3354-4

Electronic_ISBN

978-1-4244-3355-1

Type

conf

DOI

10.1109/EIT.2009.5189615

Filename

5189615