Title :
HgCdTe MIS photocapacitor detectors
Abstract :
The noise of 10 μm HgCdTe MIS detectors has been measured and compared with the integrating detector model. The detector is dominated by photon g-r noise in the measured range of f/1 to f/2.8 cold shielding. The noise has negligible 1/f component from 30 Hz to the sampling frequency. Thus, the detector shows excellent BLIP performance under these conditions. The quantum efficiency exceeds 50% and the responsivity is a direct function of integration time. Peak D* was measured at 8×1010 cm Hz1/2/w at f/1.3 cold shielding
Keywords :
II-VI semiconductors; cadmium compounds; electric noise measurement; electron device noise; infrared detectors; mercury compounds; metal-insulator-semiconductor devices; photodetectors; 10 micron; 30 Hz; 50 percent; BLIP performance; HgCdTe; IR detector; MIS photocapacitor detectors; cold shielding; integration time; photon g-r noise; quantum efficiency; responsivity;
Conference_Titel :
Advanced Infrared Detectors and Systems, 1990., Fourth International Conference on
Conference_Location :
London
Print_ISBN :
0-86341-702-7
