Title :
InAs Electron-Avalanche Photodiodes: From leaky diodes to extremely low noise avalanche photodiodes
Author :
Ker, Pin Jern ; Marshall, Andrew ; Gomes, Rajiv ; David, John Paul ; Ng, Jo Shien ; Tan, Chee Hing
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F~1.5 across temperatures ranging from 77 to 298K.
Keywords :
III-V semiconductors; avalanche photodiodes; electrons; indium compounds; InAs; avalanche photodiodes; electron; leaky diodes; temperature 77 K to 298 K; Avalanche photodiodes; Dark current; Leakage current; Noise; Temperature; Temperature dependence; Temperature measurement;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110533
