Title :
Numerical simulation of InAlAs/InAlGaAs tandem avalanche photodiodes
Author :
Sun, Wenlu ; Zheng, Xiaoguang ; Lu, Zhiwen ; Chen, Baile ; Holmes, Archie L., Jr. ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
Monte Carlo simulation is performed on a three-stage avalanche photodiode (APD). Two modifications to further reduce the excess noise are proposed.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; InAlAs-InAlGaAs; Monte Carlo simulation; excess noise; tandem avalanche photodiodes; three stage avalanche photodiode; Avalanche photodiodes; Electric fields; Impact ionization; Indium compounds; Monte Carlo methods; Noise; Semiconductor process modeling; Monte Carlo simulation; avalanche photodiode; impact ionization;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110535
