Title :
DLTS and hall effect measurement of GaAs solid phase epitaxy technology for cost effective laser applications
Author_Institution :
F. S. F. Research Technologies Inc.
fDate :
29 Aug-2 Sep 1994
Keywords :
Atom optics; Costs; Epitaxial growth; Gallium arsenide; Hall effect; Helium; Hydrogen; Laser applications; Magnetic moments; Phase measurement; Solid lasers;
Conference_Titel :
Quantum Electronics Conference, 1994., Proceedings of 5th European
Print_ISBN :
0-7803-1791-2
DOI :
10.1109/EQEC.1994.698523
