Fully-integrated CMOS power amplifier design for WiMAX application with semi-lumped transformer

Author

Jin, Boshi ; Wu, Qun ; Yang, Guohui ; Meng, Fanyi ; Fu, Jiahui ; Tang, Kai

Author_Institution

Electr. & Electron. Dept., Pohang Univ. of Sci. & Technol., Pohang

fYear

2008

fDate

13-16 July 2008

Firstpage

181

Lastpage

185

Abstract

A semi-lumped output transformer for fully-integrated RF CMOS power amplifier is proposed in this paper. We analyze and design the transformer with the even mode and odd mode method. To demonstrate this transformer, a 2.5 GHz CMOS power amplifier is implemented with 0.18 mum and 2.5/3.5 GHz dual band 0.13 mum RF CMOS process used for WiMax application are fabricated. The power amplifier can achieve 39% PAE (power added efficiency) at P_1dB (1 dB compression point) output power of 30 dBm. The linearity can satisfy the spectrum mask of WiMax signal requirement basically for 2.5 GHz CMOS power amplifier. And the gain and PAE for dual band power amplifier can also achieve 26.5 dB and 24.8 dB and 24.5% and 27.5%, respectively.

Keywords

CMOS integrated circuits; UHF power amplifiers; WiMax; transformers; WiMax; even mode method; frequency 2.5 GHz; frequency 3.5 GHz; fully-integrated RF CMOS power amplifier design; odd mode method; power added efficiency; semilumped transformer; size 0.13 mum; size 0.18 mum; CMOS process; CMOS technology; Dual band; Linearity; Power amplifiers; Power generation; Power system harmonics; Radio frequency; Radiofrequency amplifiers; WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Informatics, 2008. INDIN 2008. 6th IEEE International Conference on

Conference_Location

Daejeon

ISSN

1935-4576

Print_ISBN

978-1-4244-2170-1

Electronic_ISBN

1935-4576

Type

conf

DOI

10.1109/INDIN.2008.4618090

Filename

4618090