DocumentCode :
2748550
Title :
Real-time feedback control of reactive ion etching using neural networks
Author :
Kim, T. ; Stokes, D. ; May, G.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
4
fYear :
1996
fDate :
3-6 Jun 1996
Firstpage :
2039
Abstract :
Consistent demands on semiconductor manufacturers to produce circuits with increased density and complexity have made stringent process control an issue of growing importance in the industry. Recent work has shown that neural networks offer great promise in modeling complex fabrication processes such as reactive ion etching (RIE). Motivated by these results, this paper explores the use of neural networks for real-time, model-based feedback control of RIE. This objective is accomplished in part by constructing a predictive model for the system, which can be inverted (or approximately inverted) to achieve the desired control. The efficacy of this approach is demonstrated using experimental data from an actual RIE process to examine real-time control of critical process responses such as etch rate, uniformity, selectivity, and anisotropy
Keywords :
adaptive control; feedback; neural nets; process control; sputter etching; anisotropy; complex fabrication processes; critical process responses; etch rate; predictive model; process control; reactive ion etching; real-time model-based feedback control; selectivity; semiconductor manufacturers; uniformity; Circuits; Etching; Fabrication; Feedback control; Industrial control; Manufacturing industries; Manufacturing processes; Neural networks; Process control; Semiconductor device manufacture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Neural Networks, 1996., IEEE International Conference on
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3210-5
Type :
conf
DOI :
10.1109/ICNN.1996.549215
Filename :
549215
Link To Document :
بازگشت