Title :
Patterned zinc-diffused structures for improved avalanche probabilities in InGaAs/InP single photon detectors
Author :
Cheng, James ; Lo, Yu-Hwa
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
Abstract :
Optimal fabrication of the p-i-n junction in a high performance InGaAs/InP single photon avalanche photodiode is challenging. We present a novel design with patterned Zn-diffusion to greatly improve the detection efficiency and reduce dark count.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical fabrication; p-i-n photodiodes; photodetectors; InGaAs-InP; InGaAs/InP single photon detectors; avalanche photodiode; avalanche probabilities; optimal fabrication; p-i-n junction; patterned zinc-diffused structures; Detectors; Image edge detection; Indium gallium arsenide; Indium phosphide; Junctions; Photonics; Zinc;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110572
