Title :
GaAs/AlGaAs quantum hall resistance devices with AuGeNi and in contacts
Author :
Zhong, Y. ; Li, J.J. ; Zhong, Q. ; Lu, Y.F. ; Zhao, J.T. ; Wang, X.S.
Author_Institution :
Nat. Inst. of Metrol., Beijing, China
Abstract :
We present in CPEM 2012 the latest quantum Hall (QH) experimental results of GaAs-AlGaAs Hall devices fabricated by NIM. AuGeNi and In are utilized as the contacts material. Precision measurement indicates quantized Hall devices with low contact resistance and good breakdown current are obtained.
Keywords :
Hall effect devices; III-V semiconductors; aluminium compounds; contact resistance; electric breakdown; electrical contacts; gallium arsenide; germanium alloys; gold alloys; indium; nickel alloys; AuGeNi; CPEM 2012; GaAs-AlGaAs; In; NIM; QH resistance device; breakdown current; contact material; contact resistance; precision measurement; quantum Hall resistance device; Contact resistance; Current measurement; Electrical resistance measurement; Gallium arsenide; Resistance; Standards; Voltage measurement; AuGeNi contact; Indium contact; Quantum hall resistance; ohmic contact; resistance metrology;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4673-0439-9
DOI :
10.1109/CPEM.2012.6250965
