Title :
3.7 kV Vertical GaN PN Diodes
Author :
Kizilyalli, Isik C. ; Edwards, Andrew P. ; Nie, Hui ; Bour, David ; Prunty, Thomas ; Disney, Don
Author_Institution :
Avogy Inc., San Jose, CA, USA
Abstract :
There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (104 cm-2) bulk GaN substrates. The measured devices show breakdown voltages of 3.7 kV with an area differential specific on-resistance (Rsp) of 2.95 mΩ-cm2.
Keywords :
MOCVD; avalanche breakdown; gallium compounds; power semiconductor diodes; semiconductor device measurement; semiconductor growth; wide band gap semiconductors; GaN; MOCVD; area differential specific on resistance; breakdown voltages; bulk substrates; low defect density; power electronics application; vertical GaN PN diodes; voltage 3.7 kV; wide band gap semiconductor devices; Gallium nitride; Schottky diodes; Silicon; Silicon carbide; Substrates; Gallium nitride; avalanche breakdown; power diodes; power-semiconductor devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2294175
