DocumentCode :
2749599
Title :
Integrated S band mixers
Author :
Genzabella, C. ; Howell, C.
Author_Institution :
Microwave Associates, Inc., Burlington, MA, USA
Volume :
14
fYear :
1966
fDate :
21-25 March 1966
Firstpage :
113
Lastpage :
118
Abstract :
This paper describes the approaches used and some of the results obtained building integrated mixers in 
band. These mixers are built with a unique "bilithic" Schottky-barrier diode chip and evaporated microstrip circuitry on alumina dielectric. Mixer noise figures are less than 7.5 db with local oscillator powers of 
to 30 mw. The impedances are 
in and out with the signal input VSWR being less than 1.5/1 over the local oscillator range and a bandwidth of 
%.
band. These mixers are built with a unique "bilithic" Schottky-barrier diode chip and evaporated microstrip circuitry on alumina dielectric. Mixer noise figures are less than 7.5 db with local oscillator powers of to 30 mw. The impedances are in and out with the signal input VSWR being less than 1.5/1 over the local oscillator range and a bandwidth of %.Keywords :
Distributed parameter circuits; Integrated circuit noise; Local oscillators; Microstrip; Microwave integrated circuits; Noise figure; Power transmission lines; Schottky diodes; Semiconductor device noise; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
1958 IRE International Convention Record
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/IRECON.1966.1147703
Filename :
1147703
Link To Document :
