DocumentCode :
2750038
Title :
Single-mode lasing from top-down fabricated gallium nitride nanowires
Author :
Wright, J.B. ; Li, Q.M. ; Luk, T.S. ; Brener, I. ; Wang, G.T. ; Westlake, K.R. ; Lester, L.F.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2011
fDate :
9-13 Oct. 2011
Firstpage :
529
Lastpage :
530
Abstract :
We study lasing in individual top-down fabricated GaN nanowires by optical pumping. We observe single mode emission with a side mode suppression of 15 dB, linewidths of less than 1 nm and thresholds as low as 250 kW/cm2.
Keywords :
III-V semiconductors; gallium compounds; nanowires; optical pumping; semiconductor lasers; GaN; optical pumping; side mode suppression; single mode emission; single mode lasing; top-down fabricated nanowires; Films; Gallium nitride; Laboratories; Laser modes; Nanowires; Physics; Pump lasers; Gallium Nitride; Laser; Nanowire; Semiconductor Lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
Type :
conf
DOI :
10.1109/PHO.2011.6110655
Filename :
6110655
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2750038
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