• DocumentCode
    2750038
  • Title

    Single-mode lasing from top-down fabricated gallium nitride nanowires

  • Author

    Wright, J.B. ; Li, Q.M. ; Luk, T.S. ; Brener, I. ; Wang, G.T. ; Westlake, K.R. ; Lester, L.F.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    529
  • Lastpage
    530
  • Abstract
    We study lasing in individual top-down fabricated GaN nanowires by optical pumping. We observe single mode emission with a side mode suppression of 15 dB, linewidths of less than 1 nm and thresholds as low as 250 kW/cm2.
  • Keywords
    III-V semiconductors; gallium compounds; nanowires; optical pumping; semiconductor lasers; GaN; optical pumping; side mode suppression; single mode emission; single mode lasing; top-down fabricated nanowires; Films; Gallium nitride; Laboratories; Laser modes; Nanowires; Physics; Pump lasers; Gallium Nitride; Laser; Nanowire; Semiconductor Lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110655
  • Filename
    6110655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2750038