Characteristics of graphene for quantized hall effect measurements

Author

Elmquist, Randolph E. ; Shen, Tian ; Real, Mariano ; Calizo, Irene G. ; Bush, Brian G. ; He, Guowei ; Yang, Yanfei ; Klimov, Nikolai ; Newell, David B. ; Hight-Walker, Angela R. ; Feenstra, Randall M.

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2012

fDate

1-6 July 2012

Firstpage

514

Lastpage

515

Abstract

This paper describes concepts and measurement techniques necessary for characterization of graphene in the development of graphene-based quantized Hall effect (QHE) devices and resistance standards. We briefly contrast the properties of graphene produced by three common processing methods and discuss the conditions necessary for well-developed resistance plateaus to be observed. Methods used to determine the graphene layer thickness are presented. The metrologically relevant characteristics of graphene are correlated with electrical transport measurements in strong magnetic fields.

Keywords

Hall effect devices; electric resistance measurement; graphene; measurement standards; electrical transport measurement; graphene based quantized Hall effect device; graphene characteristic; quantized Hall effect measurements; resistance standard; strong magnetic fiel; Educational institutions; Hall effect; Laboratories; Resistance; Scanning electron microscopy; Standards; Substrates; Electrical resistance measurements; graphene; material properties; measurement standards; quantum Hall effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM), 2012 Conference on

Conference_Location

Washington, DC

ISSN

0589-1485

Print_ISBN

978-1-4673-0439-9

Type

conf

DOI

10.1109/CPEM.2012.6251029

Filename

6251029