• DocumentCode
    275004
  • Title

    Non-destructive layer thickness measurements of multi-layer silicon-on-insulator structures

  • Author

    Pickering, C. ; Sharma, S. ; Morpeth, A.G. ; Branfield, P.J. ; Hodge, A.M.

  • Author_Institution
    R. Signals & Radar Establ., Malvern, UK
  • fYear
    1990
  • fDate
    19-22 Mar 1990
  • Firstpage
    403
  • Lastpage
    406
  • Abstract
    Layer thickness information on gate and field oxides, buried insulators and epitaxial layers is becoming more critical as device dimensions are reduced and structure complexity increases. Spectroscopic ellipsometry (SE) has been used to measure oxide, epi- and poly-Si thicknesses at stages during processing on structures comprising poly-Si/oxide/SOS and oxide/poly-Si/oxide/bulk Si. The structures measured are directly analogous to multi-layer structures formed during most SOI processing and the applicability to other technologies is illustrated by measurements on commercial SIMOX and ZMR wafers
  • Keywords
    ellipsometry; nondestructive testing; oxidation; semiconductor technology; semiconductor-insulator boundaries; thickness measurement; SIMOX; SOI processing; Si; Si-Al2O3; Si-SiO2; ZMR wafers; buried insulators; epitaxial layers; field oxides; multi-layer silicon-on-insulator structures; spectroscopic ellipsometry;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    UK IT 1990 Conference
  • Conference_Location
    Southampton
  • Type

    conf

  • Filename
    114320
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=275004