DocumentCode
2750112
Title
Analysis of the effects of high-energy electrons on a low earth orbit satellite parts
Author
Chung, S.I. ; Lee, H.H.
Author_Institution
Dept. of Electr. Eng., Chung-Nam Nat. Univ., Daejeon
fYear
2008
fDate
13-16 July 2008
Firstpage
700
Lastpage
702
Abstract
This study aims to analyze the effects of high-energy electrons, which are cosmic radiation, on satellite parts. In general, a satellite revolving at a low altitude passes through the Van Allen belt. In the belt, electronic parts of the satellite are damaged and their life is shortened by charged particles drifting toward the south pole and the north pole through cyclic movement. In particular, SEU (single event upset) by radiation causes the malfunction of semiconductor elements in satellites. The present study irradiated an electron beam on solar cells using a 1 MeV electron beam accelerator and measured the values of parameters changed by the irradiation. In addition, we made comparative analysis with ground experiment using variation in short circuit current measured at solar cells for the attitude control of STSAT-1 and electron flux observed in the NOAA POES Satellite. The results of this study are expected to be useful in understanding the impact of radiation on solar cells for power generation in low altitude satellites.
Keywords
artificial satellites; attitude control; cosmic background radiation; electron beams; solar cells; telecommunication control; NOAA POES Satellite; STSAT-1; Van Allen belt; attitude control; cosmic radiation; cyclic movement; electron beam accelerator; electron flux; high-energy electrons; irradiation; low earth orbit satellite parts; power generation; semiconductor elements; short circuit current; single event upset; solar cells; Belts; Current measurement; Electron accelerators; Electron beams; Extraterrestrial measurements; Low earth orbit satellites; Particle accelerators; Photovoltaic cells; Short circuit currents; Single event upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Informatics, 2008. INDIN 2008. 6th IEEE International Conference on
Conference_Location
Daejeon
ISSN
1935-4576
Print_ISBN
978-1-4244-2170-1
Electronic_ISBN
1935-4576
Type
conf
DOI
10.1109/INDIN.2008.4618191
Filename
4618191
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