Title :
Influence of backside doping on the nonlinear capacitances of a PHEMT affecting the VCO frequency characteristics
Author :
Brech, H. ; Grave, T. ; Werthof, A. ; Siweris, H.J. ; Simlinger, T. ; Selberherr, S.
Author_Institution :
Corp. Technol., Siemens AG, Munich, Germany
Abstract :
A local maximum in the CGS(VGS) characteristics of an AlGaAs/InGaAs/AlGaAs PHEMT is both calculated by hydrodynamic simulations and extracted from S-parameter measurements. It is found by simulation that the doping on the backside of the channel is the origin of this behavior. VCO measurements demonstrated that this C GS(VGS) characteristic can result in a partially reversed tuning behavior
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; capacitance; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; AlGaAs-InGaAs-GaAs; PHEMT; S-parameter; VCO frequency characteristics; backside doping; hydrodynamic simulations; nonlinear capacitance; partially reversed tuning; Capacitance; Circuit simulation; Doping; Frequency; HEMTs; Hydrodynamics; Indium gallium arsenide; MODFETs; PHEMTs; Voltage-controlled oscillators;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711723
