Title :
Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate
Author :
Tian, Pengfei ; Xie, Enyuan ; Gong, Zheng ; Chen, Zhizhong ; Yu, Tongjun ; Sun, Yongjian ; Qi, Shengli ; Chen, Yujie ; Zhang, Yanfeng ; Calvez, Stephane ; Gu, Erdan ; Zhang, Guoyi ; Dawson, Martin D.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
Abstract :
By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.
Keywords :
III-V semiconductors; bending; bonding processes; gallium compounds; integrated optics; laser materials processing; light emitting diodes; optical fabrication; wide band gap semiconductors; AuSn; AuSn substrate; bending radii; flexible vertical structure light emitting diodes; laser lift off techniques; metal bonding; metal debonding; Bonding; Gold; Light emitting diodes; Optical device fabrication; Optical imaging; Substrates; AuSn; Flexible optoelectronics; GaN; vertical structure LEDs;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110666
