DocumentCode
2750231
Title
ZnO for homojunction light emitting diodes and transparent conductors
Author
Sun, Xiao Wei
Author_Institution
Dept. of Appl. Phys., Tianjin Univ., Tianjin, China
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
553
Lastpage
554
Abstract
ZnO has a bandgap of 3.4 eV and exciton binding energy of about 60 meV, which makes it an interesting UV emitting material with great potential. It is also a very promising transparent conducting oxide to be used as the alternative of indium tin oxide (ITO). ITO may retreat from transparent conducting oxide in the long run due to the scarcity of In.
Keywords
II-VI semiconductors; conductors (electric); indium compounds; light emitting diodes; zinc compounds; InSnO; ZnO; electron volt energy 3.4 eV; electron volt energy 60 eV; exciton binding energy; homojunction light emitting diodes; transparent conducting oxide; transparent conductors; Educational institutions; Films; Indium tin oxide; Ion implantation; Light emitting diodes; Sun; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110667
Filename
6110667
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