DocumentCode :
2750293
Title :
The effects of annealing process under H2/N2 environment on the characteristics of low temperature solution processed InGaZnO thin film transistors
Author :
Im, Hwarim ; Noh, Jeong A. ; Jang, Jongsu ; Hong, Yongtaek
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
fYear :
2011
fDate :
9-13 Oct. 2011
Firstpage :
559
Lastpage :
560
Abstract :
We demonstrated solution processed InGaZnO (IGZO) TFTs annealed at low temperature under H2/N2 environment and investigated the effects of annealing process under H2/N2 environment on the characteristics of low temperature solution processed InGaZnO TFTs.
Keywords :
III-V semiconductors; annealing; gallium compounds; indium compounds; thin film transistors; zinc compounds; H2/N2 environment; InGaZnO; annealing process; low temperature solution; thin film transistors; Annealing; Films; Flexible electronics; Substrates; Temperature; Thin film transistors; Threshold voltage; H2 annealing; Thin film transistors; low temperature; solution processed InGaZnO;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
Type :
conf
DOI :
10.1109/PHO.2011.6110670
Filename :
6110670
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2750293
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