Title :
Photoinduced instability in microwave excited GaAs MESFETs
Author :
Lan, E.Y. ; Huang, J.H. ; Blaugh, J. ; Schirmann, E.
Author_Institution :
Phoenix Corp. Res. Lab., Motorola Inc., Tempe, AZ, USA
Abstract :
A photoinduced low frequency oscillation (LFO) is observed in GaAs MESFETs under microwave excitation at room temperature. The phenomenon is a self-sustained externally driven output power amplitude modulation and occurs within a range of light intensity, microwave power excitation level, and quiescent bias state. The oscillation frequency depends on the light intensity and microwave power, varying from 0.1 to 100 Hz. This oscillation phenomenon is found to be a strong function of device surface condition
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; 0.1 to 100 Hz; 293 K; GaAs; device surface condition; light intensity; low frequency oscillation; microwave excited GaAs MESFETs; microwave power; oscillation frequency; photoinduced instability; quiescent bias state; self-sustained externally driven output power amplitude modulation; Electromagnetic heating; Frequency; Gallium arsenide; Laboratories; MESFETs; Microwave communication; Microwave devices; Photonic band gap; Power generation; Temperature;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711724
