DocumentCode
2750354
Title
An integration algorithm for the temperature solution of the four-layer infinite plate structure
Author
Lee, Chin C. ; Min, Jay ; Palisoc, Arthur L.
Author_Institution
Dept. of Electr. Eng., California Univ., Irvine, CA, USA
fYear
1989
fDate
7-9 Feb. 1989
Firstpage
48
Lastpage
51
Abstract
An algorithm is presented for the effective and accurate integration of the temperature solution of a four-layer plate structure with infinite lateral boundaries. By using the method of images, the effect of the finite lateral boundaries of a rectangular structure can be taken into account, and the solution of the infinite plate structure can be utilized to represent exactly the solution of a rectangular structure. The solution for the rectangular structure is in the form of an infinite double Fourier cosine series. A large number of terms has to be summed for accurate temperature calculation, resulting in prohibitively long CPU time for structures with small heat sources. The solution of the infinite plate structure is an inverse double Fourier cosine integration whose integrand decreases very rapidly with the spatial frequencies alpha and beta . However, it is highly oscillatory, so that general-purpose integration routines require long CPU time and produce uncertain results. By using the integration algorithm developed, the authors were able to reduce the CPU time by a factor of 10 and at the same time obtain more accurate results. For the rectangular structure, the CPU time is reduced by a factor of 100 to 1000.<>
Keywords
Fourier analysis; circuit analysis computing; integration; numerical methods; semiconductor device models; thermal analysis; CPU time; IC modelling; finite lateral boundaries; four-layer infinite plate structure; infinite double Fourier cosine series; infinite lateral boundaries; integration algorithm; inverse double Fourier cosine integration; rectangular structure; semiconductor device models; Accuracy; Analytical models; Bonding; Central Processing Unit; Convergence; Fourier series; Frequency; Gallium arsenide; Integrated circuit modeling; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal and Temperature Measurement Symposium, 1989. SEMI-THERM V., Fifth Annual IEEE
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/STHERM.1989.76065
Filename
76065
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